NXP
Stage ingénieur : mmW IC Designer Conception d'un amplificateur de puissance RF pour radar automobile évolutif (F/H)
France · Work style not stated · Full time
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About the role
Description from the employer’s posting. Check the employer’s page for the current version.
- EmployerNXP
- LocationFrance
- Work styleWork style not stated
- Employment typeFull time
- Employer posted
Àproposdel’équipe
AuseindelaBusinessLineAutomotiveEmbeddedSystemsdeNXP,nousdévelopponsdescircuitsintégrésdestinésàlavoitureconnectée.
Nosactivitéscouvrentlesréseauxembarqués,l’éclairageautomobile,lessystèmesaudio,lagestiondel’alimentationainsiquelesradars.
L’équipededéveloppementradar77GHzestrépartieentreGrenobleetplusieursautressitesinternationaux.
Elle conçoitdesémetteurs-récepteurs(transceivers)pourlesapplicationsradarautomobiles,allantdel’aideaustationnementaurégulateurdevitesseadaptatif,enpassantparl’évitementdescollisionsetlaconduiteautonome.
Vous évoluerez dans un environnement international etpluridisciplinaireauxcôtésd’architectesRF,d’ingénieursenconceptionRF,d’ingénieurssystèmes,despécialistesenvérificationetmodélisation,d’ingénieursvalidation,d’ingénieursnumériquesetd’ingénieurstest.
Contextedustage
Lesnouvellestechnologiesdepackagingpermettentd’intégrerplusieurspuces,issuesdedifférentsprocédésdefabricationdesemi-conducteurs,auseind’unmêmeboîtier.
Show full description
Celaoffrel’opportunitéd’utiliserlatechnologielaplusadaptéeàchaquefonction,deréutiliserdeschipletsIPéprouvésetdedévelopperdesproduitsradarévolutifs.
Lachaîned’émissionconstituel’unedesfonctionscritiquesd’untransceiverradar.
L’étudeporterasurl’amplificateurdepuissance(PowerAmplifierouPA)ainsiquesursonintégrationavecledriveretlerotateurdephase(phaserotator).
L’objectifestdedéterminersiunetechnologieBiCMOSpeutaméliorerlesperformancesRF,larobustesseoul’efficacitéénergétiquetoutenmaîtrisantlasurfacesiliciumetlescoûts.
Objectifdustage
Concevoirundémonstrateurd’amplificateurdepuissanceetcomparerdifférentsprocédéstechnologiquesafindepréparerlaprochainegénérationdechaînesd’émissionradar.
Le travail consistera à identifier le niveau minimal de performance technologique nécessaire pour atteindre lesobjectifsvisésetàévaluerlesprincipauxcompromisentrepuissancedesortie,consommationélectrique,surfacesilicium,bruit,coûtetrobustessefaceauxvariationsdeprocédé,detensionetdetempérature.
Missionsprincipales
Analyserl’architecturecibledelachaîned’émission,lesspécificationsRFetlescontraintesliéesaupackaging.
DéfiniruneméthodologiedecomparaisonpourlestechnologiesCMOSetBiCMOSsélectionnées.
Concevoirouadapterdesbancsdetestauniveautransistorpourévaluerlegain,lapuissancedesortie,lerendement,lastabilité,lebruitetlarobustesse.
Concevoiretoptimiserl’étagedepuissanceduPA,ycomprisleschoixd’adaptationd’impédanceetdepolarisation.
Évaluerlasensibilitéauxvariationsdeprocédé,detensiond’alimentation,detempérature,auxparasitesderoutage(layout)etauxcontraintesthermiques.
Étudierl’interfaceavecledriveretlerotateurdephaseafind’identifierlescontraintesd’intégration.
Comparerlesdifférentesoptionsd’implémentationàl’aided’indicateurscommunsdeperformance,desurfaceetdecoût.
Documenterlesconclusionsetformulerunerecommandationauprèsdel’équipedeconception.
Résultatsattendus
Étudecomparativedestechnologiesavechypothèsesdeconceptiondocumentées.
Sélectiondel’architecturePAaccompagnéed’uneanalyseclairedescompromis.
Démonstrateurauniveauschématiqueetenvironnementdesimulationréutilisable.
Synthèsedesperformances,delastabilité,delaconsommationetdesanalysesPVT(Process,Voltage,Temperature).
Recommandationsd’intégrationpourl’ensembledelachaîned’émission.
Rapportfinaletprésentationdesrésultats.
Votreprofil
Étudiant(e)endernièreannéed’écoled’ingénieursouenMasterspécialiséengénieélectrique,microélectronique,électroniqueoudomaineconnexe.
SolidesbasesenconceptiondecircuitsanalogiquesetRF.Desconnaissancesenconceptionmicro-ondesouondesmillimétriques(mmWave)constituentunatout.
Intérêtmarquépourlaconceptiondecircuitsintégrés,lestechnologiesdessemi-conducteursetlescompromisdeconception.
Capacitéàanalyserdesrésultatsdesimulation,àformaliserdesconclusionsetàcommuniquerclairement.
Personneproactive,organiséeetàl’aisedansunenvironnementinternational.
Bonniveaud’anglaisécritetoral.
Cequenousoffrons
UnprojetconcretdeconceptionRF/mmWaveliéauxradarsautomobilesdenouvellegénération.
UnaccompagnementtechniquepardesexpertsenconceptiondecircuitsintégrésRFetmmWave.
Uneexpositionàdesméthodesdeconceptionavancées,aubenchmarkingtechnologiqueetauxcontraintessystème.
Un environnement dynamique favorisant la collaboration, l’apprentissage technique et l’innovation.
About the team
At NXP's Automotive Embedded Systems Business Line, we develop integrated circuits for the connected car.
Our activities cover in-vehicle networking, automotive lighting, audio systems, power management and radar.
The 77 GHz radar development team is distributed across Grenoble, France, and several international locations.
It designs transceivers for automotive radar applications, from parking assistance to adaptive cruise control, collision avoidance and autonomous driving.
You will join an international and cross-functional environment with RF IC architects, RF design engineers, system engineers, verification and modeling engineers, validation engineers, digital engineers and test engineers.
Internship context
New packaging technologies enable several dies, based on different semiconductor processes, to be integrated in one package.
This creates an opportunity to use the right technology for each function, reuse proven IP chiplets and build scalable radar products.
The transmit chain is one of the critical functions in a radar transceiver.
The study will focus on the power amplifier and its integration with the driver and phase rotator.
The goal is to understand whether a BiCMOS technology can improve RF performance, robustness or efficiency while keeping area and cost under control.
Internship objective
Design a Power Amplifier demonstrator and benchmark suitable process options for a next-generation radar TX chain.
The work will identify the minimum technology capability needed to meet the target performance and will assess the main trade-offs between output power, DC power, silicon area, noise, cost and process-voltage temperature robustness.
Main activities
Review the target TX architecture, RF specifications and package constraints
Define a comparison methodology for selected CMOS and BiCMOS process options
Build or adapt transistor-level test benches for gain, output power, efficiency, stability, noise and robustness
Design and optimize the PA power stage, including matching and biasing choices
Assess sensitivity to process, supply voltage, temperature, layout parasitics and thermal constraints
Study the interface with the driver and phase rotator and identify integration constraints
Compare implementation options using common performance, area and cost indicators
Document the conclusions and present a recommendation to the design team
Expected results
Technology benchmark and documented design assumptions
PA architecture selection with clear trade-off analysis
Schematic-level demonstrator and reusable simulation environment
PVT, stability, performance and power summary
Integration recommendations for the complete TX chain
Final report and presentation
Your profile
Final-year engineering school or MSc student in electrical engineering, microelectronics, electronics or a related field
Good foundation in analog and RF circuit design. Knowledge of microwave or mmWave design is a plus
Interest in integrated circuit design, semiconductor technologies and design trade-offs
Ability to analyze simulation results, document conclusions and communicate clearly
Proactive, structured and comfortable working in an international team
Good written and spoken English
What we offer
A concrete RF/mmWave design project linked to next-generation automotive radar
Technical mentoring from experienced RF and mmWave IC designers
Exposure to advanced design methods, technology benchmarking and system-level constraints
A dynamic environment that values collaboration, technical learning and innovation
More information about NXP in France...
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At a glance
- Employment typeFull time
- Employer posted
- Added to ROLIVA
- Last checked